Abstract
FeMn/Co/Ru/Co artificial antiferromagnets for use in giant magnetoresistive spin-valve elements were fabricated and magnetically characterized. The magnetization behavior of the films can be understood by coherent rotation of the magnetizations of the layers. A simple model is presented which reproduces all the basic characteristics of the magnetization loops, e.g., shape, switching fields, and magnitude of the pinning field as a function of thickness. The model is also extended to a complete spin-valve system, including the effects of coupling between the biased layer and the free layer
Original language | English |
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Pages (from-to) | 13896-13898 |
Journal | Physical Review B |
Volume | 62 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2000 |
Externally published | Yes |