TY - JOUR
T1 - Manipulating metal-oxide nanowires using counter-propagating optical line tweezers
AU - van der Horst, Astrid
AU - Campbell, Andrew I.
AU - van Vugt, Lambert K.
AU - Vanmaekelbergh, Daniël A.
AU - Dogterom, Marileen
AU - van Blaaderen, Alfons
PY - 2007
Y1 - 2007
N2 - Semiconducting nanowires, such as ZnO and Si, are used in the fields of nanophotonics and nanoelectronics. Optical tweezers offer the promise of flexible positional control of such particles in a liquid, but so far this has been limited to either manipulation close to the surface, or to axial trapping of nanowires. We show the three-dimensional trapping of ZnO and silica-coated Si nanowires in counter-propagating line tweezers, and demonstrate translational and rotational in-plane manipulation, away from the surfaces. The high-refractive index particles investigated - ZnO wires (n~1.9) with varying lengths up to 20mum and 6-mum-long silica-coated Si wires (n =3.6) - could not be trapped in single-beam line traps. Opposite surface charges are used to fix the nanowires to a surface. Full translational and in-plane rotational control of semiconducting nanowires expands the possibilities to position individual wires in complex geometries significantly
AB - Semiconducting nanowires, such as ZnO and Si, are used in the fields of nanophotonics and nanoelectronics. Optical tweezers offer the promise of flexible positional control of such particles in a liquid, but so far this has been limited to either manipulation close to the surface, or to axial trapping of nanowires. We show the three-dimensional trapping of ZnO and silica-coated Si nanowires in counter-propagating line tweezers, and demonstrate translational and rotational in-plane manipulation, away from the surfaces. The high-refractive index particles investigated - ZnO wires (n~1.9) with varying lengths up to 20mum and 6-mum-long silica-coated Si wires (n =3.6) - could not be trapped in single-beam line traps. Opposite surface charges are used to fix the nanowires to a surface. Full translational and in-plane rotational control of semiconducting nanowires expands the possibilities to position individual wires in complex geometries significantly
U2 - https://doi.org/10.1364/OE.15.011629
DO - https://doi.org/10.1364/OE.15.011629
M3 - Article
C2 - 19547523
SN - 1094-4087
VL - 15
SP - 11629
EP - 11639
JO - Optics express
JF - Optics express
IS - 18
ER -