TY - GEN
T1 - Robust semiconductor overlay metrology with non-uniform illumination beams using digital holographic microscopy
AU - Adhikary, Manashee
AU - Cromwijk, Tamar
AU - Witte, Stefan
AU - de Boer, Johannes F.
AU - den Boef, Arie
N1 - Funding Information: The authors thank Jo de Wit, Sander Konijnenberg, and Teus Tukker for their valuable contributions to this research. This work was conducted at the Advanced Research Center for Nanolithography, a public–private partnership between the University of Amsterdam, Vrije Universiteit Amsterdam, Rijksuniversiteit Groningen, the Netherlands Organization for Scientific Research (NWO), and the semiconductor equipment manufacturer ASML. Publisher Copyright: © 2023 SPIE.
PY - 2023
Y1 - 2023
N2 - Precise, accurate, and fast characterization of overlay between two layers of semiconductors during chip fabrication is an important monitoring and feedback step. Overlay, which is to be measured within the accuracy of a nanometer, is susceptible to many small imperfections in the measurement system. A digital holographic microscope measures the complex field of overlay targets using simple optics followed by computational algorithms for overlay metrology. We improved the precision of overlay measurement by correcting the inhomogeneities and asymmetries caused by the illumination spots, presenting a robust method resulting from simple calibration steps.
AB - Precise, accurate, and fast characterization of overlay between two layers of semiconductors during chip fabrication is an important monitoring and feedback step. Overlay, which is to be measured within the accuracy of a nanometer, is susceptible to many small imperfections in the measurement system. A digital holographic microscope measures the complex field of overlay targets using simple optics followed by computational algorithms for overlay metrology. We improved the precision of overlay measurement by correcting the inhomogeneities and asymmetries caused by the illumination spots, presenting a robust method resulting from simple calibration steps.
KW - Semiconductore metrology
KW - diffraction-based overlay
KW - digital holographic microscopy
KW - illumination inhomogeneity correction
UR - http://www.scopus.com/inward/record.url?scp=85172689094&partnerID=8YFLogxK
U2 - https://doi.org/10.1117/12.2673583
DO - https://doi.org/10.1117/12.2673583
M3 - Conference contribution
VL - 12618
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Optical Measurement Systems for Industrial Inspection XIII
A2 - Lehmann, Peter
PB - SPIE
T2 - Optical Measurement Systems for Industrial Inspection XIII 2023
Y2 - 26 June 2023 through 29 June 2023
ER -