Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

G. J. Strijkers; H. J. M. Swagten; B. Rulkens; R. H. J. N. Bitter; W. J. M. de Jonge; P. J. H. Bloemen; K. M. Schep

doi:https://doi.org/10.1063/1.368443

Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

G. J. Strijkers, H. J. M. Swagten, B. Rulkens, R. H. J. N. Bitter, W. J. M. de Jonge, P. J. H. Bloemen, K. M. Schep

Research output: Contribution to journal › Article › Academic › peer-review

20 Citations (Scopus)

Abstract

We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf(Si)O matrix causes this decrease as function of temperature. A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance. (C) 1998 American Institute of Physics. [S0021-8979(98)02917-X]

Original language	English
Pages (from-to)	2749-2753
Journal	JOURNAL OF APPLIED PHYSICS
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.368443
Publication status	Published - 1998
Externally published	Yes

Access to Document

https://doi.org/10.1063/1.368443

Cite this

@article{fefaa8c10a324d6989467d2b20fce88d,

title = "Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films",

abstract = "We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf(Si)O matrix causes this decrease as function of temperature. A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance. (C) 1998 American Institute of Physics. [S0021-8979(98)02917-X]",

author = "Strijkers, {G. J.} and Swagten, {H. J. M.} and B. Rulkens and Bitter, {R. H. J. N.} and {de Jonge}, {W. J. M.} and Bloemen, {P. J. H.} and Schep, {K. M.}",

year = "1998",

doi = "https://doi.org/10.1063/1.368443",

language = "English",

volume = "84",

pages = "2749--2753",

journal = "JOURNAL OF APPLIED PHYSICS",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

AU - Strijkers, G. J.

AU - Swagten, H. J. M.

AU - Rulkens, B.

AU - Bitter, R. H. J. N.

AU - de Jonge, W. J. M.

AU - Bloemen, P. J. H.

AU - Schep, K. M.

PY - 1998

Y1 - 1998

N2 - We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf(Si)O matrix causes this decrease as function of temperature. A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance. (C) 1998 American Institute of Physics. [S0021-8979(98)02917-X]

AB - We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf(Si)O matrix causes this decrease as function of temperature. A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance. (C) 1998 American Institute of Physics. [S0021-8979(98)02917-X]

U2 - https://doi.org/10.1063/1.368443

DO - https://doi.org/10.1063/1.368443

M3 - Article

SN - 0021-8979

VL - 84

SP - 2749

EP - 2753

JO - JOURNAL OF APPLIED PHYSICS

JF - JOURNAL OF APPLIED PHYSICS

IS - 5

ER -